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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5296 DESCRIPTION With TO-3PML package High breakdown voltage, high reliability. High speed Built in damper diode APPLICATIONS Ultrahigh-definition CRT display Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 800 6 8 16 TC=25ae 60 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Collector current Collector current-peak Open collector Emitter Fig.1 simplified outline (TO-3PML) and symbol UNIT V V V A A PC Collector power dissipation 3 W Tj Tstg Junction temperature Storage temperature 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5296 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=5A;IB=1.25 A IC=5A;IB=1.25 A IC=100mA;IB=0 VEB=4V IC=0 VCB=800V ;IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5V IC=5A ; VCE=5V 15 4 800 40 130 10 1 25 7 |I MIN TYP. MAX 5 1.5 UNIT V V V mA A mA SYMBOL VCEsat VBEsat VCEO(SUS) IEBO ICBO ICES hFE-1 hFE-2 Switching times tstg tf TOR NDU ICO E SEM ANG INCH Storage time Fall time IC=4A;RL=50| IB1=0.8A; IB2=-1.6A VCC=200V 0.1 3.0 |I |I s s 0.2 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5296 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5296 TOR NDU ICO E SEM ANG INCH 4 |
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